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| CS26LV16163BH
The CS26LV16163B is a high performance, high speed, low power pseudo SRAM organized as 1M words by 16 bits and operates from a wide range of 2.7 to 3.3V supply voltage.
Advanced DRAM technology and circuit techniques provide both high speed and low power features with a typical standby current of 20uA and maximum access time of 70ns in 3.0V operation. Easy memory expansion is provided by an active LOW chip enable (/CE) and active LOW output enable (/OE) and three-state output drivers.
The CS26LV16163B has a deep power down feature, reducing the power consumption significantly when chip is deselected. The CS26LV16163B is available 48-ball BGA package. |
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