The CS26LV16163B is a high performance, high speed, low power pseudo SRAM organized as 1M words by 16 bits and operates from a wide range of 2.7 to 3.3V supply voltage.
Advanced DRAM technology and circuit techniques provide both high speed and low power features with a typical standby current of 20uA and maximum access time of 70ns in 3.0V operation. Easy memory expansion is provided by an active LOW chip enable (/CE) and active LOW output enable (/OE) and three-state output drivers.
The CS26LV16163B has a deep power down feature, reducing the power consumption significantly when chip is deselected. The CS26LV16163B is available 48-ball BGA package.
Low operation voltage : 2.7 ~ 3.3V Ultra low power consumption : Vcc = 3.0V, 20uA (Typ.) CMOS standby current High speed access time : 70ns (Max.) at Vcc = 3.0V. Deep power down when chip is deselected. Three state outputs and TTL compatible, Asynchronous SRAM compatible operation Easy expansion with /CE and /OE options.