| |
|
|
| CS26LV16173H
The CS26LV16173 is a high performance, high speed, low power pseudo SRAM organized as 1, 0487,576 words by 16 bits and operates from a wide range of 2.7 to 3.6V supply voltage.
Advanced DRAM technology and circuit techniques provide both high speed and low power features with a typical standby current of 80uA and maximum access time of 70ns in 3.0V operation. Easy memory expansion is provided by an active LOW chip enable (/CE1), active HIGH chip enable2 (CE2) and active LOW output enable (/OE) and three-state output drivers.
The CS26LV16173 has a power down feature, reducing the power consumption significantly when chip is deselected.
The CS26LV16173 is available 48-ball BGA package. |
 |
|
|
 |
FEATURES |
|
|
Low operation voltage: VCC: 2.7 ~ 3.6V
VCCQ and VSSQ for separate I/O power rail. VCCQ: 2.7 ~ 3.6V
Ultra low power consumption:
VCC = 3.0V
3mA＠ 1us cycle time operating current
80uA (Typ.) CMOS standby current
High speed access time: 70ns (Max.) at Vcc = 3.0V.
Power down when chip is deselected.
Three state outputs and TTL compatible,
Asynchronous SRAM compatible operation
Easy expansion with /CE1 and /OE options. |
|
|
|
FAQ SUPPORT |
|
|
|
| |
All green and handheld application product such as cellar phone, DECT, PDA, WLL, E-book, handy game, POS, E-dictionary, E-learning machine... etc.
|
|
| |
Yes. All the packages are green & Pb free packages to meet RoHS standard specification.
|
|
| |
Wafer manufacturing => China-ShangHai/Taiwan ;
Assembly/Testing => China-ShangHai /Taiwan.
|
|
| |
|
FILE DOWNLOAD |
|
|
|
|
|
|
| |
|
|
