The CS26LV16173 is a high performance, high speed, low power pseudo SRAM organized as 1, 0487,576 words by 16 bits and operates from a wide range of 2.7 to 3.6V supply voltage.
Advanced DRAM technology and circuit techniques provide both high speed and low power features with a typical standby current of 80uA and maximum access time of 70ns in 3.0V operation. Easy memory expansion is provided by an active LOW chip enable (/CE1), active HIGH chip enable2 (CE2) and active LOW output enable (/OE) and three-state output drivers.
The CS26LV16173 has a power down feature, reducing the power consumption significantly when chip is deselected.
The CS26LV16173 is available 48-ball BGA package.
Low operation voltage: VCC: 2.7 ~ 3.6V VCCQ and VSSQ for separate I/O power rail. VCCQ: 2.7 ~ 3.6V Ultra low power consumption: VCC = 3.0V 3mA＠ 1us cycle time operating current 80uA (Typ.) CMOS standby current High speed access time: 70ns (Max.) at Vcc = 3.0V. Power down when chip is deselected. Three state outputs and TTL compatible, Asynchronous SRAM compatible operation Easy expansion with /CE1 and /OE options.